Abstract

In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was found that p-side thickness must be wider than the n-side, while its acceptor concentration should be slightly lower than the donor concentration of the n-side to achieve maximum efficiency. In addition, different absorber types, namely, i-absorber, n-absorber and p-absorber, are compared to the proposed pn-absorber, showing a performance-boosting effect when using the latter. Moreover, the proposed structure is made without a hole transport layer (HTL) to avoid the organic issues of the HTL materials. The back metal work function, bulk trap density and ETL material are optimized for best performance of the HTL-free structure, giving Jsc = 26.48, Voc = 0.948 V, FF = 77.20 and PCE = 19.37% for AM1.5 solar spectra. Such results highlight the prospective of the proposed structure and emphasize the importance of using HTL-free solar cells without deteriorating the efficiency. The solar cell is investigated by using SCAPS simulator.

Highlights

  • Among the various new energy technologies, solar power is one of the most favorable technologies [1,2]

  • We propose a hybrid heterohomojunction-based, lead-free perovskite solar cell (PSC) utilizing an n-type CH3 NH3 SnI3 /p-type CH3 NH3 SnI3 bilayer as an absorber layer by deploying SCAPS for the numerical analysis

  • TCO and Au are front and back electrodes, TiO2 is used as the electron transporting layer (ETL), and Spiro-OMeTAD is utilized as a hole transporting layer (HTL)

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Summary

Introduction

Among the various new energy technologies, solar power is one of the most favorable technologies [1,2]. As a result, designing efficient p–n homojunctions in the HTL-free PSCs could be a useful and favorable approach to further improve the solar cell performance and to decrease the production cost as well. We propose a hybrid heterohomojunction-based, lead-free PSCs utilizing an n-type CH3 NH3 SnI3 /p-type CH3 NH3 SnI3 bilayer as an absorber layer by deploying SCAPS for the numerical analysis. This configuration allows for omitting the HTL layers, making an HTL-free device structure. Based on the presented results, we provide some recommendations and guidance to the design of hetero-homojunction lead-free PSCs, either with or without HTL

SCAPS Highlight
Device Model and Parameters
Simulation
Design
Impact
Influence of Perovskite Doping Concentration
Comparison
11. Comparison
Design of HTL-Free Hybrid Hetero-Homojunction Cell
Influence of Doping
Influence
Influence of Absorber Defect Trap Density and Energy
ETL Variation
Comparison of Various Designed Structures
Conclusions
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