Abstract
In this study, the analysis of HRTEM images of SiC on p-type Si (111) deposited by MBE was performed. Fullerene C60 and Si are used in growth process as solid sources. Carbonization of substrate is done at temperature 600 oC before starting the growth of SiC to reduce lattice mismatch. During 4 hour growth process the temperature of substrate and C60 was 1100 0C and 625 0C respectively and chamber pressure was 1.4×10-9 Torr. The sample was characterized using HRTEM and EDAX. Surface analysis shows that the grown film contains vacancies, voids, stacking faults of intrinsic nature, and twinning along (111) plane. The change in structure from stable 3C-SiC to 6H-SiC has been observed.
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