Abstract
The 1/f noise of short-channel n-type MOSFET's is measured in the weak inversion regime before and after an electrical stress. The noise increase which follows the aging is shown to be due to an electrically induced generation of traps in the gate oxide rather than fast interface states. Noise experiments prove that the degradation occurs in a narrow region (less than 50 nm) near the drain. Created traps also appear to have an inhomogeneous energy profile.
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