Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

Abstract

The theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the “relaxation time approximation”. The calculations show that the dominant lattice scattering mechanism for holes is the acoustic deformation potential. We show that Hall factors are very important when we attempt to compare the calculated drift mobility with measured Hall ones.