Abstract
We describe the use of electro-optic probes for the characterization of GaAs ICs. The use of various methods of electro-optic probing for measuring on-chip waveforms is discussed, as are the principal features, and the major advantages and disadvantages of each method. Details of the back-side electro-optic probe are discussed, and representative examples illustrating its utility and limitations for the analysis of high-speed ICs are discussed. New methods of probing are proposed, and a few downstream applications are outlined.
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