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Abstract
By illuminating the small area of the semitransparent Schottky barrier cathode of an n-InP diode with above-bandgap radiation, the travelling dipole domain can be triggered. The dipole domain transversely extends with a velocity of 108 cms−1. The nature of high travelling speed and high extension speed of the dipole domain can be used for achieving a high-speed and high-gain n-InP photodetector.
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