Abstract
The rate of the pyrolytic epitaxial growth of GaAs 1- x P x is calculated as a function of x on the basis of the two-dimensional nucleation mechanism, where the supersaturation in the vapor phase depends on the equilibrium pressure of GaAs 1- x P x . The resulting rate of growth is shown to be in good agreement with experimental observations previously reported. It is suggested that the pyrolytic growth is limited by the formation of two-dimensional nuclei, which rapidly spread across the crystal surface.
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