Abstract
This paper reports the analysis of GeH 4 and GeF 4 as gaseous feed materials for Ge + implantation. The study of this spectra, carried out with the help of the implanter analyser magnet, reveals the tremendous importance of their chemical differences. The tetrafluoride is found to be superior since (a) it does not produce any solid deposit that blocks the gas entrance, (b) it enables any desired germanium isotope to be implanted without risking the introduction of any other element, and (c) it produces ion intensities 6–10 times higher than the monogermane.
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