Abstract
This paper presents the analysis of problem as to when the GaN HEMT (Gallium nitride high electron mobility transistor) is applied to power conversion system. Compared to state-of-the-art super junction Si (Silicon) MOSFET (Metal oxide semiconductor field effect transistor), the FOM (Figure of merit) is much better because of heterojunction structure and wide band gap characteristics. However, designing the power conversion system with GaN HEMT is difficult due to its sensitive threshold voltage. The quite small parasitic capacitance makes it harder to design due to steep dv/dt and di/dt and design factor different from MOSFET as well. In this paper, the printed circuit board layout consideration is analyzed to realize effects of parasitic inductance of power and gate driver loop. In addition, the cause of the ZVS (Zero Voltage Switching) failure is mathematically analyzed as a result of mismatched deadtime. A 600 W phase shifted full bridge dc-dc converter is designed to evaluate effects of parasitic inductance and ZVS failure issues.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
