Abstract

We present a systematic analysis of the forward tunnelling current in GaN-based blue light-emitting diodes by using the current-voltage (I-V) measurements from 100 K to 300 K. The semi-log forward I-V curves in the above temperature range exhibit typical features of defect-assisted tunnelling mechanism, such as the temperature independent current slope and an ideality factor larger than 2. Exponential bias- and temperature-dependent characteristics of the tunnelling current have been observed, which are due to the bias-induced route change of the diagonal tunnelling and thermally-induced band gap shrinkage effect in the GaN materials, respectively.

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