Abstract
A study of the damages caused by gallium focused ion beam (FIB) is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compound milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and the formation of metallic clusters. Microdisks resonators are fabricated using FIB milling of different emission currents. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases.
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