Abstract
In this paper we have calculated Flatband voltage (VFB) in terms of interface trap charges, fixed oxide charges and oxide trapped charges for thin oxide Metal Oxide Semiconductor (MOS) Devices using different high-k dielectric materials such as HfO2, ZrO2, Al2O3 and Si3N4. It has been found that the VFB shift of all the samples indicated negative due to the existence of deep donor type surface states and positive interface charges, and these effects are highly responsible for variation in interface trap density with oxide thickness. It has been evaluated that, with respect to SiO2 for the same oxide thickness, high- k contributes less to VFB. As we move to greater dielectric constant, VFB approaches to zero for the same oxide and interface charge. Excellent agreement has been observed for theoretical and simulation results.
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