Abstract
Solutions of field effect equations in which carrier density and space-charge distributions are considered in general form show that the LF terminal characteristics are not strongly dependent on the shape of the distribution curves. General expressions for mutual transconductance, output conductance, junction capacitance and current amplification are derived as functions of the depletion layer thickness at the device boundaries. These expressions are not explicitly dependent on charge distribution. Relationships between the small-signal and dc terminal characteristics depend on the shape of the charge distribution curves but cannot be varied by more than a factor of two. The shape of the device is shown to have secondary importance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
