Abstract
Abstract A method for calculating the relationship between the density of localized states in an amorphous semiconductor and the experimentally measured field-effect conductance is presented. Commonly used simplifying assumptions of a constant space-charge density, zero-temperature statistics and a parabolic band-bending potential profile are removed and the errors that are introduced by using these approximations calculated. The method is used to show that the existence of a reported peak in the density of states at 0·4 eV below the conduction-band mobility edge of amorphous silicon (the Ex peak) cannot be proved through field-effect-conductance measurements.
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