Abstract
In order to improve the knowledge of dielectric properties of insulators, we have imagined an original method of characterization of the charge buildup. Electrons of an electron beam are implanted through a metallic ball directly in contact with the insulator in a scanning electron microscope. By calculating and modeling the capacitance and the electrostatic force between the ball and the insulator plane, it has been possible to determine the relationship between the injected charges in the metallic ball and its surface potential. The major role of the dielectric thickness has been evidenced when the insulator is placed on a grounded metallic plane. At high potential values, a dielectric breakdown of the medium surrounding the sphere occurs and electrical charges are transferred from the ball to the dielectric sample. This transfer has been evidenced and quantified in the case of sapphire and quartz. Analytical calculations and numerical simulations using the finite-element method have been performed for interpreting these experimental results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
