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Abstract
The low-temperature Hall mobility of photoexcited electrons has been measured in Si-doped MBE AlGaAs samples and compared with calculated data using the background acceptor density and the alloy scattering potential as free parameters. The possibility of discriminating between negative- or positive- U electron correlation energy for the DX centre has been investigated through a careful analysis of mobility versus temperature curves relating to different photoexcited electron densities. A crucial role of the acceptor density to explain the experimental data within the positive- U model has been evidenced.
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