Abstract
Low-energy electron microscopy was carried out to study the electron emission process from a GaAs photocathode with a negative electron affinity (NEA) surface. The relationship between emission current and electron affinity was investigated in detail to obtain information regarding the electron tunneling in the vacuum barrier and the electron distribution in the interior of GaAs, especially with respect to photoelectron capture in the band bending region. A comparison of the calculated quantized sub-band energies in the band bending region confirmed that the majority of photoelectrons fell within sub-bands, from where a large portion of the photoelectrons escape into the vacuum.
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