Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses

Abstract

An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconductor (MOS) capacitors has been developed by considering a parallel-perpendicular kinetic energy coupling, which is represented by the gate electron phase velocity, and anisotropic masses under a parabolic E-k dispersion relationship. The electron effective mass in the oxide and the electron phase velocity in the n+ poly-Si gate are the only two fitting parameters to compare calculated tunneling currents to measured ones. It was obtained that the calculated tunneling currents fit well to the measured ones. The electron effective mass in the oxide layer tends to increase with decreasing the oxide thickness. In addition, the gate electron velocity is a constant of 1x105m/s. Moreover, the theoretical model offers a simple treatment and an accurate result in obtaining the tunneling current.