Abstract
The paper presents a discussion on memristive-like properties observed in metal/semiconducting-oxide/metal structure containing a semiconducting (TixCu1-x)Ox thin film with asymmetrical elemental Cu distribution over the thin film thickness. The thin film was prepared using a combinatorial multi-magnetron sputtering process. Based on current-to-voltage electrical investigations, a sharp forward-to-open rectifying behaviour was observed with a hysteresis loop in the forward bias conditions only. Detailed structure and elemental profile investigations allowed to propose explanation of observed type of resistive transition.
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