Abstract
The dynamic electrical conduction in the bulk ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300°C to 440°C in the frequency range 1kHz–1MHz. New activation energy for conduction mechanism is obtained and its frequency dependence is analyzed. The Cole–Cole representation is almost half circular indicating a single contribution to total electrical conduction through the material. The activation energy for the mean relaxation process, obtained separately from the analysis of imaginary part Z″ of complex impedance Z* and from the equivalent electric circuit, is estimated to be (942±74)meV. The correlated barrier hopping model is considered to analyze the experimental data. The results are compared with those obtained previously in low temperature range.
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