Abstract
This paper designed a structure of the shielded trench gate power MOSFET device, which has been applied to small capacity (less than or equal to 100 V) and high-speed operation as the next generation power semiconductor device, based on the optimally developed design and process parameters using 2D device and process simulator, and then compared and analyzed the electrical characteristics between existing and shielded trench gate power MOSFET devices. The breakdown voltage characteristic, which was regarded as the core characteristic of power semiconductor device, showed that both of the devices had around 120 V, indicating no significant change. However, the threshold voltage characteristic, which was one of the characteristics present in power semiconductor devices for mobile phone battery, exhibited that turn-on voltage was comparable with each other but the flowing current characteristic was significantly improved in the shielded trench gate power MOSFET. Furthermore, the on-resistance characteristic was analyzed according to the oxide thickness of shielded MOSFET, and the optimal value was obtained when oxide thickness was 0.3 μm.
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