Abstract
A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current–voltage ( I– V) measurements between 300 and 380 K with 20 K intervals. The short current density ( J sc ) and open circuit voltage ( V oc ) parameters have been determined between 40 and 100 mW/cm 2. The photovoltaic parameters of the device have been also determined under 100 mW/cm 2 and AM1.5 illumination condition.
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