Abstract
The applications of magnetoresisatance structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. Nyquist diagrams for In4Se3 crystal with the impurities of chromium, copper and germanium at different temperatures ranging from room temperature to liquid nitrogen are analyzed. The influence of metal impurities and its concentration on the electrical and magnetic properties of semiconductor crystals of the InSe type is discussed.
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