Analysis of E-H plane tee junction using a variational formulation

Abstract

A three-port equivalent network for an E-H plane tee junction is determined taking into account the effect of waveguide wall thickness and considering the contribution of the dominant mode to the imaginary part of the self-reaction. The parameters of the three-port equivalent network are determined. From a knowledge of the equivalent network parameters, the net impedance loading, reflection coefficient, and coupling are evaluated for an E-H plane tee junction. A comparison between theoretical and experimental results is also presented. >