Abstract
Two kinds of dislocation generated at inclusions in Gd 3Ga 5O 12 are analyzed by repeated etching and polishing procedures. One is a dislocation loop around an inclusion and the other is a straight dislocation generated at an inclusion. The true shape of these dislocations is determinable by this repeated etching technique. The technique should prove valuable in the development of dislocation-free crystal growth procedures.
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