Abstract
From the past to present progression of CMOS technology has carried out the advances of semiconductor electronics devices. But as the size of CMOS is getting harder to shrink and the limits of this technology is at the boundary level, the time has come to find a new robust technology to continue the journey towards high speed, low power consumption and small in size semiconductor electronics. Resonant Tunneling Diode (RTD) has the potential to takeover CMOS. RTD has a unique NDR (Negative Differential Resistance) region which shows reduction of size and complexity in analog and digital circuits. In this paper, single and multiple Gallium Arsenide/Aluminium Gallium Arsenide (GaAs/AlGaAs) based double barrier Resonant Tunneling Diode (RTD) used digital inverter circuits has been analyzed for both PDR1 (Positive Differential Resistance 1) and PDR2 (Positive Differential Resistance 2) regions.
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