Abstract
Diffusion processes in a phonon gas were studied in a wide temperature range in the application to silicon. To provide this analysis we develop a new method of computation based on the kinetics of phonon gas in combination with Monte Carlo simulation. This model for the first time allows one to obtain the diffusion coefficients, the influence of different types of interaction processes of phonons on diffusion and other information about processes in phonon gas. Presented method is useful in the study of heat transfer in nanostructures.
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