Abstract
Thin film of indium oxide (In2O3) is deposited on p-silicon substrate using sol-gel spin technique. The sol-gel spin deposited film is very smooth with grain size and root mean square surface roughness of ~40nm and ~7.9nm, respectively. The device parameters of Al/In2O3/p-Si Schottky diode were investigated using direct current current-voltage (I-V) and impedance spectroscopy. The ideality factor and barrier height of the diode were determined to be 1.07+/-0.03 and 0.72+/-0.02eV, respectively. At higher voltages, the charge transport mechanism of the diode is controlled by a trap-charge limited conduction mechanism (TCLC). The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency.
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