Abstract
In present paper, the device parameters of tin oxide/n-Si(100) structure have been determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) measurements between 500Hz and 1MHz and current–voltage (I–V) measurements between −2 and +3V at 300K. This device has denoted good rectifying behavior and the I–V data could be described by thermionic emission (TE) technique. The values of ideality factor (n) and barrier height (ΦB) for the sample have been determined to be 3.724 and 0.624eV, respectively. The measured values of capacitance and conductance for the series resistance under all the biases have been corrected influence to calculate the real values of capacitance and conductance. The frequency dependence of the capacitance may be attributed to trapping states. Interface trap states of the MOS device increased by decreasing the frequency and were calculated as 1.12×1011 and 6.62×1011eV−1cm−2 for 1MHz and 100kHz, respectively. Several important device parameters such as barrier height (ΦB), fermi energy (EF), diffusion voltage (VD), donor carrier concentration (ND) and space charge layer width (WD) for the device have been obtained between 100kHz and 1MHz.
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