Abstract
The selective wet etching of the AlAs release layer with a HF solution was investigated for epitaxial lift-off (ELO) process. By measuring the lateral etch depth, the etch rate was estimated. A stress by the deposited Au electrode on the thin device layer enhanced the etch rate. For substrate reuse, the exposed substrate surface after the etching was observed by scanning electron microscopy (SEM). Two kinds of morphologic depositions were typically observed in this study. Streaky aligned depositions were found just after the ELO process. During long-term storage of the substrate, some parts of the depositions were gradually re-formed into micrometer-size crystals. These micro-crystals were revealed to be As2o3 upon the compositional characterization by energy dispersive X-ray spectrometry, and we found the annealing process removes the micro-crystals.
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