Abstract
The analysis of Raman scattering (RS) spectroscopy is presented for low-temperature polycrystalline silicon (poly-Si) thin films on glass substrates fabricated by excimer laser crystallization. In this material, RS is enhanced by specific protrusions at the grain boundary (GB). As a result, the Si lattice mode predominantly reflects the characteristics of GB and its neighborhood. A combination of low-damage hydrogenation and RS analysis enables the detection of lattice defects as Si–hydrogen (H) local vibration modes (LVMs). The characteristics of LVMs peculiar to this material are examined by chemical etching and postannealing. One of the dominant LVMs centered at ∼2000 cm−1 is assigned to H-terminated dangling bonds in the amorphous structures at GB, which is also enhanced by protrusions. The other dominant band centered at ∼2100 cm−1 is attributed to the strained Si–Si lattice near the Si/underlayer interface in grains that is broken and stabilized by extrinsic H atoms.
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