Abstract
Two approaches of Gaussian distribution of barrier heights in inhomogeneous Schottky diodes have been analyzed by comparing the results for consistency between the two. For this the current–voltage characteristics of inhomogeneous Schottky diodes have been generated by using analytically solved thermionic-emission diffusion equation incorporating Gaussian distribution of barrier heights and by direct numerical integration over a barrier height range. The differences in the results obtained in two approaches are discussed and it is shown that the two approaches yield current–voltage characteristics with slightly different features. The discrepancies in the results obtained in two approaches are attributed to the same series resistance assumed for all elementary barriers of the distribution. It is shown that assigning same series resistance to all barrier of the distribution in numerical integration approach causes current saturation at low bias and inhibits intersection of current–voltage curves from being observable which otherwise occurs in the curves obtained using analytical equation. The paper deals with these aspects in details.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
