Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Abstract

UV visible-blind and solar-blind 320 × 256 photodiode arrays based on AlxGa1 – xN heteroepitaxial structures (AlGaN HES) and sensitive in the near-ultraviolet range of 0.2–0.4 μm have been created and studied. The AlGaN HES were grown by organometallic vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on sapphire substrates. To reduce structural defects, the state of the surface and the surface layer of epipolished sapphire substrates was investigated, and a finishing technology was developed. UV FPAs in the AlGaN HES were produced by ion etching. The dark current components for AlGaN photodiodes were simulated. The main dark current components, such as generation–recombination, shunting leakage, hopping conductivity, and Poole–Frenkel components, are calculated. The possibility of achieving photoelectric parameters on the level of the best foreign counterparts is demonstrated.