Abstract
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.
Highlights
Dilute nitride semiconductors alloys, i.e., arsenides, phosphides or antimonides, with the addition of a small amount of nitrogen, are an attractive material for both laser [1,2,3]and photovoltaic [4,5,6,7,8,9,10,11] communities
It is worth mentioning that this paper, to the best of our knowledge, is the first work where carrier transport mechanism analysis of p-i-n GaAsN solar cell is presented in detail
Electro-optical absorption-like characterization was performed by means of photocurrent spectroscopy (PC) and external quantum efficiency (EQE) measurements
Summary
I.e., arsenides, phosphides or antimonides, with the addition of a small amount of nitrogen, are an attractive material for both laser [1,2,3]. Mutual strain compensation in dilute nitrides is possible due to the presence of opposite signs of the strain component, i.e., tensile for GaAsN and compressive for InGaAs, GaAsSb and GaAsBi, respectively [18]. It is, possible to deposit advanced structures of multijunction solar cells, which offer higher efficiencies with lower weight. The crucial component of a multijunction solar cell, i.e., the tunnel junction, can be affected by thermal load during the growth in the multilayer structure and, the degradation of its conductivity is possible [37]. It is worth mentioning that this paper, to the best of our knowledge, is the first work where carrier transport mechanism analysis of p-i-n GaAsN solar cell is presented in detail
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