Abstract
Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.
Highlights
Cubic boron nitride single crystals have a high hardness, high melting point, high thermal conductivity, wide energy gap, and low dielectric constant, which make them highly promising materials [1,2,3,4]
CBN single crystals are synthesized using hexagonal boron nitride as the source material and lithium nitride (Li3N) as the catalyst by the static high temperature and high pressure (HPHT) catalytic method [5,6,7]. e further development of electronic and optical applications need large Cubic boron nitride (cBN) single crystals with high quality, while the size of present cBN single crystals cannot meet the demand for the study of advanced functional products [8, 9]
In a previous experimental study, the cBN nucleation was discussed, which indicates that cBN crystal nuclei are formed directly by the transition of hexagonal boron nitride (hBN) [10]. e growth process of cBN single crystals determines their quality after cBN nucleation under HPHT. e growth defects could affect the crystal quality; the importance of growth defects in cBN single crystals growth should be clearly recognized [11]
Summary
Cubic boron nitride (cBN) single crystals have a high hardness, high melting point, high thermal conductivity, wide energy gap, and low dielectric constant, which make them highly promising materials [1,2,3,4]. In a previous experimental study, the cBN nucleation was discussed, which indicates that cBN crystal nuclei are formed directly by the transition of hBN [10]. E growth process of cBN single crystals determines their quality after cBN nucleation under HPHT.
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