Abstract
Ultrathin active layers with quantum well (QW) depth and/or width modulation in one or two lateral directions are considered. It is shown that modulation leads to a modification in the density of state (DOS) distribution and, hence is involved in working optical transitions. Such features of corrugated QW (CQW) can be suitable in laser structures for reducing the threshold carrier concentration, increasing the T 0 parameter and stabilising the operation wavelength compared to ordinary quantum well structures. An advantage of these profiled QWs is the opportunity to use suitable properties of 1D and 0D objects without actually making these microstructures, but only profiling the planar QW
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