Abstract
In this study, the extended-gate field-effect transistor (EGFET) with an on-chip sensing window under the TSMC 0.18μm 1P6M (one poly and six metals) CMOS process technology was fabricated as a biosensor. The sensing window was composed of six metal layers and functionalized with the ruthenium dioxide (RuO2) thin film and uricase for uric acid detection. The RuO2 thin film was deposited on the top metal layer of the sensing window using the radio frequency (RF) sputtering system. The silver probe was employed as a reference electrode to provide a voltage to the test solution with a micro-volume of 0.5 μL. The properties of the EGFET for uric acid detection were investigated through the semiconductor parameter analyzer. The EGFET had a voltage and the current sensitivity of 8.63 mV/(mg/dL) and 0.17 (μA)1/2/(mg/dL), respectively. The device worked with a supply voltage lower than 1.8V. Based on the results, the fabrication of the miniaturized biosensor device was a success. Due to its advantages such as the use of low voltage and its simple fabrication process, it could help realize the development of a wearable biosensor.
Highlights
IN 1970, the ion-sensitive field-effect transistor (ISFET) was first proposed [1]
This study designed the metal-oxide-semiconductor field-effect transistor (MOSFET) device and the on-chip sensing window in the form of extended-gate field-effect transistor (EGFET) using a 0.18μm 1P6M CMOS process technology provided by the Taiwan Semiconductor Manufacturing Company (TSMC)
The EGFET was mainly comprised of a MOSFET device and the on-chip sensing window, and the drain-source current (IDS) of EGFET followed the principle of MOSFET
Summary
IN 1970, the ion-sensitive field-effect transistor (ISFET) was first proposed [1]. ISFET was based on the metal-oxide-semiconductor field-effect transistor (MOSFET). Many non-ideal effects of ISFET, such as output voltage drift, input capacitance attenuation, etc., were caused by the reference electrode, electrolyte solution, and the passivation layer of ISFET, which was directly in contact and with a bias applied. They designed a dry test method to avoid these non-ideal effects. This study designed the MOSFET device and the on-chip sensing window in the form of EGFET using a 0.18μm 1P6M CMOS process technology provided by the Taiwan Semiconductor Manufacturing Company (TSMC).
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