Abstract
Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.
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