Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model

Abstract

To clarify the carrier transport mechanism of pentacene field-effect transistors (FETs), the FET characteristics was examined in the region where the drain-source voltage V ds is lower than the saturated voltage. The I ds -V ds characteristics shows the ohmic behavior in the low voltage region, whereas it shows the characteristics explained by the Maxwell-Wagner model. This result clearly indicates that carrier injection from source makes a significant contribution to the carrier transport. It was also shown that the change of I ds -V ds characteristics from the ohmic behavior to the Maxwell-Wagner behavior is similar with the I-V characteristics change from the ohmic to the space charge limited current behavior observed in metal-organic film-metal junctions, including metal-pentacene-metal.