Abstract
An ultrafast (10ps delay) characterization method is used to measure threshold voltage shift (ΔV T ) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress in N and P channel Gate All Around (GAA) NSFETs. ΔV T time kinetics at various gate bias (V G ) and temperature (T) for BTI and at various VG and drain bias (V D ) for HCD is analyzed. Contribution from Self Heat Effect (SHE) induced BTI to overall HCD is estimated under full V G /V D space and pure HCD contribution is determined.
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