Abstract
AbstractThe beam divergence angles for the fundamental TE mode both in the directions parallel and perpendicular to the junction plane of InGaAsP/InP semiconductor laser diodes emitting at 1.3 and 1.55 μm have been investigated. The analysis is based on the effective‐index method and the results can be used to design laser diodes (LDs) with minimum beam divergence which will improve the coupling efficiency between LDs and single‐mode fibers.
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