Abstract
The electronic properties of AA and AB-stacked bilayer graphene has been carefully investigated by the principle of Hamiltonian tight binding model. It is determined that the AA-stacked bilayer graphene not showing any significant response to the change in the applied electric field. However, we find that the AB-stacked bilayer graphene showing a tunable energy band gap from 0 to 0.27 eV under the applied electric field. It is also concluded that the stacking sequence of bilayer graphene and charge distribution in the inter and intra-graphene layer determine the energy band gap structure. Based on the applied mechanism, the bandgap of AB-stacked bilayer graphene can be engineered under direct current (DC) and low amplitude electric filed potential for the optical excitation.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
