Abstract
ABSTRACTDLTS data taken on MBE grown AlGaAs films show peak heights which increase, maximize, and then decrease with increasing sample temperature. This behavior is difficult to explain within the context of conventional DLTS analysis. We suggest that the data can be accounted for by a trap with a temperature dependent capture cross section in conjunction with a model described by Lee and Borrego in which electron and hole emission rates are comparable. Using this analysis, we obtain an effective trap depth Eeff of 0.35 eV and a capture cross section activation energy Eσ 0.25 eV.
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