Abstract
A wafer-bonded Ge∕Si heterojunction was observed using transmission electron microscopy to analyze its crystallographic properties and to reveal atomic profiles at the interface by energy dispersive x-ray spectroscopy. There was a 2nm thick transition layer at the heterojunction, where an aligned lattice image from Si to Ge together with a disordered lattice image could be observed. In the Si layer close to the interface, islandlike modified regions were observed to exist, where a large amount of Ge was detected. Oxygen was also detected accumulated at the interface.
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