Abstract
Starting from an equation of internal emission current, a phenomenological analysis of Esaki effect was made by the introduction of a concept of the availability of empty states in a band to which an electron tunnels. An assumption in the calculation of a tunneling current may not be valid at very low temperatures. Agreement with experiments was found on the tunneling current densities of both Ge and GaAs p – n junctions and the temperature and the bias dependences of the tunneling current. The investigation of the excess current indicated that a thermally activated process might exist.
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