Abstract
A singularly perturbed traveling wave problem derived from the drift diffusion model describing electron transport in two-valley semiconductor materials is analysed. It is shown that the reduced problem, defined on a submanifold of the phase space, has homoclinic orbits for certain parameters. By using methods from invariant manifold theory and methods from homoclinic continuation theory, it is proved that the homoclinic orbits of the reduced problem persist in a global center manifold near the manifold of the reduced problem.
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