Abstract
Abstract The contact resistance of amorphous Si ( a- Si:H)/transparent-conducting oxide (TCO) is evaluated and analyzed in terms of the contribution to the series resistance ( R s ) and fill factor ( FF ) in the Si heterojunction back-contact (HBC) solar cell. It is shown that p-a- Si:H (emitter) and n-a- Si:H (back surface field: BSF)/TCO contact resistance are of similar values (0.37–38 Ω cm 2 ) which are much higher than those of doped crystalline Si/metal contacts used in conventional Si solar cells. Of some factors affecting R s loss in the HBC solar cell, BSF/TCO contact is the most significant one when considering the contact area. By interleaving the n -type microcrystalline Si ( n-μc- Si) between n-a- Si:H and TCO, 6-inch HBC solar cell with 20.5% efficiency is obtained, which was attributed to the reduced R s and improved FF . It is noteworthy that the variations of R s and FF are well estimated by measuring BSF-contact resistance, and are close to the empirical data: reduction in R s to 1.77 Ω cm 2 and the increase in FF by 6.0% compared to the cell without n-μc- Si interface layer. The results indicate that there is much room for higher efficiency by reducing the emitter- and BSF-contact resistance. Nonetheless, the method developed here can be a powerful tool to analyze the resistance component in HBC cell.
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