Abstract
This paper analyzes the effect of germanium doping on the performance of an optical PN phase shifter in silicon photonics platform. The fabrication process flow is defined using a 2D process simulation tool to create the phase shifter structure. The mode, material, and loss parameters of the designed phase shifter are calculated and the performance is compared with a silicon phase shifter. A 1.84× higher phase shift, 1.27× lower absorption, and 1.50× lower insertion loss is obtained for the silicon-germanium phase shifter compared to silicon.
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