Analysis of a process simulated graded-index strained silicon-germanium optical phase shifter

Abstract

This paper analyzes the effect of germanium doping on the performance of an optical PN phase shifter in silicon photonics platform. The fabrication process flow is defined using a 2D process simulation tool to create the phase shifter structure. The mode, material, and loss parameters of the designed phase shifter are calculated and the performance is compared with a silicon phase shifter. A 1.84× higher phase shift, 1.27× lower absorption, and 1.50× lower insertion loss is obtained for the silicon-germanium phase shifter compared to silicon.