Abstract
The purpose of this article is to analyze the operation of a pressure sensor in a diode configuration based on field emission from n-Si/nitrogen doped diamond cathodes. The device comprises a silicon membrane, which is the pressure sensing element. When the device emission current is kept constant, the membrane bending under external pressure modifies its operating voltage in a linear way. A new model has been developed to characterize field emission from n-Si/nitrogen doped diamond cathodes, showing good agreement with experimental data. The device sensitivity has been computed as function of both the silicon membrane and diamond layer parameters. Better sensor sensitivity is obtained for membranes with smaller dimensions and thinner, but the opposite trend allows to increase the measurable pressure range. The obtained modeling results can be further used for sensor design improvement.
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