Analysis of a novel Si1-xGex/Si heterojunction stacked oxide double-gate tunnel field-effect transistor with asymmetry structure for improved DC and analog/RF performance

Abstract

In this work, a novel Si1-xGex/Si heterojunction and stacked oxide double-gate tunnel field-effect transistor with asymmetry structure (ASHJSO-DGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the DC and analog/RF performance of silicon-based double-gate tunnel field-effect transistors with asymmetry structure (ASSi-DGTFETs) is also discussed. Compared to ASSi-DGTFETs, ASHJSO-DGTFET maintains lower off/ambipolar-state current and obtains higher on-state current. The simulation results reveal that the on-state current, switching ratio, and minimum SS of the optimal ASHJSO-DGTFET are 5.27 × 10−5 A/μm, 0.64 × 1012, and 12.3 mV/dec, respectively. Moreover, the maximum gds, gm, ƒT and GBW of ASHJSO-DGTFET are 85 μS/μm, 172 μS/μm, 54.5 GHz and 9.8 GHz, respectively. Therefore, the proposed ASHJSO-DGTFET is more suitable for the ultra-low power integrated circuits.